| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor device and its manufacturing method to realize an ultra high-speed semiconductor device, wherein using Si/SiC Hetero junction in an active region, a suitable strain for n-channel transistor and p-channel transistor respectively is made to be applicable by SiC. SOLUTION: An n-channel insulation gate type FET included in the semiconductor device is equipped with a SiC layer 2 formed on the Si layer 1; a gate insulation film 3 formed on a SiC layer 2; a gate electrode 4 formed on the gate insulation film 3; and a layer, namely a 3C-SiC layer 8, formed on a portion covering a source region 5 and a drain region 6 among the SiC layer 2 formed on the Si layer 1, and composed of a material having a small lattice constant compared with Si and the lattice constant being near to SiC. COPYRIGHT: (C)2007,JPO&INPIT
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