| 摘要 |
The invention relates to a photovoltaically active semiconductor material and a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material contains a crystal lattice composed of zinc telluride and, in the zinc telluride crystal lattice, ZnTe is substituted by - 0.01 to 10 mol% CoTe, - 0 to 10 mol% Cu2Te, Cu3Te or CuTe and - 0 to 30 mol% of at least one compound selected from the group MgTe and MnTe, and wherein, in the zinc telluride crystal lattice Te is substituted by - 0.1 to 30 mol% oxygen. The photovoltaic cell furthermore has a rear contact composed of a rear contact material that forms a metal telluride with tellurium. |
