| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a NAND cell unit in which a vertical memory cells are vertically stacked, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor memory device is provided with a semiconductor substrate; a plurality of gate wiring stacks formed so that a plurality of layers of gate wiring arrayed with an oblong pattern in one direction on the substrate are stacked so as to be separately from each other by an insulation film, and having a side surface in which the gate wirings and the insulation films are alternately exposed; a gate insulation film including an insulative charge accumulating layer formed on the surface of each of the gate wiring stacks in its inside; a plurality of pillar-like semiconductors opposite to the side surface of each of the gate wiring stacks via the gate insulation film, and arranged with a predetermined pitch in the longitudinal direction of the gate wiring; and a data line contacting the upper surface of each of the pillar-like semiconductors and formed so as to be orthogonal to the gate wiring. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
