| 摘要 |
PROBLEM TO BE SOLVED: To reduce the temperature dependency of on-state resistance of a vertical MOSFET. SOLUTION: In the super-junction structure wherein an n-type column and a p-type column are repeated, the width of a column where a carrier passes through is 4.5μm or less, and the concentration of impurity of the column where the carrier passes through is adjusted to be lower than a concentration satisfying the reduced surface field. Thus, assuming that on-state resistance at 27°C is R1 and that at 150°C is R2, R2/R1 is less than 1.8 times, and the temperature dependency of resistance can be made low and circuit characteristic be also stabilized. Furthermore, the necessity of keeping the temperature of the semiconductor device constant can be reduced, and a cooling device can be greatly simplified. COPYRIGHT: (C)2007,JPO&INPIT
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