| 摘要 |
PROBLEM TO BE SOLVED: To effectively prevent the occurrence of the problem, wherein the ON-state resistance is increased and the withstand voltage and/or the breakdown resistance are/is reduced, etc. due to the void within a gate electrode in a trench-gate semiconductor device. SOLUTION: In a trench-gate MOS transistor, a trench 15 is formed, and the gate electrode is embedded in this trench via a gate insulating film 16. The gate electrode comprises a first gate electrode 17A, formed so as to have a recess inside the trench 15 along the gate insulating film 16, an interlayer insulating film 18 formed along the surface on this recess side, and a second gate electrode 19A formed to fill the recess and consisting of the same material as the first gate electrode 17A. COPYRIGHT: (C)2007,JPO&INPIT
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