| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a CMOS image sensor, which substantially reduces the vertical height up to a microlens in a light-receiving section so as to improve the sensitivity of the image sensor, and to reduce optical crosstalks. SOLUTION: A method of manufacturing a CMOS image sensor comprises: a step of preparing a semiconductor substrate on which a pixel array section and a logic circuit section are defined; a step of forming lower interconnection on the semiconductor substrate; a step of forming an interlayer insulation film over the entire semiconductor substrate surface, including the lower interconnection; a step of selectively removing the interlayer insulation film on the logic circuit section to form a first via hole; a step of embedding a metal in the first via hole; a step of planarizing the surface and of forming upper interconnection; a step of forming a protective film over the entire surface, including the upper interconnection; and a step selectively removing the protective film on the upper interconnection to form a second via hole. COPYRIGHT: (C)2007,JPO&INPIT
|
