| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a compound semiconductor epitaxial substrate which is capable of making the surface roughness of a thin film semiconductor layer smoother, and reducing a variation in its sheet resistance through surface. SOLUTION: In a compound semiconductor epitaxial substrate manufacturing method, a thin film semiconductor layer is epitaxially grown on the surface of a compound semiconductor single crystal substrate so as to manufacture the compound semiconductor epitaxial substrate. The thin film semiconductor layer is grown on a prescribed number of the semiconductor single crystal substrates which are arranged to vary their off-angles, the surface roughness of the thin film semiconductor layers is measured, a correlation is checked between the off-angle of the semiconductor single crystal substrates and the surface roughness of the thin film semiconductor layers, the usable off-angle of the compound semiconductor epitaxial substrates is obtained on the basis of the correlation, so as to get the thin film semiconductor layers having the surface roughness below a required value and sheet resistance that has a variation below a required value through surface; the compound semiconductor epitaxial substrate having the above off-angle is selected; and the thin film semiconductor layer is epitaxially grown thereon. COPYRIGHT: (C)2007,JPO&INPIT
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