| 摘要 |
PROBLEM TO BE SOLVED: To provide a growing tool for thermal uniformity capable of reducing variation in crystal characteristics in an epitaxial wafer by making thermal distribution of the growing tool uniformize. SOLUTION: In a tool 1, a substrate 3 is held on the surface of a tool body 2, the substrate 3 is heated by a heater 4 from the rear surface of the tool body 2 for epitaxial growth of crystal, and uneven sections 5 are formed on the rear surface of the tool body 2. COPYRIGHT: (C)2007,JPO&INPIT |
