发明名称 MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC STORAGE, AND MAGNETIC MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a high output magnetoresistive effect element with good sensitivity for detecting magnetic field, and to provide a magnetic head, a magnetic storage, and a magnetic memory device employing it. SOLUTION: A GMR film 30 comprises an underlying layer 31, an antiferromagnetic layer 32, a fixed magnetization laminate 33, a nonmagnetic metal layer 37, a diffusion preventive layer 38, a free magnetization layer 39, and a protective layer 40 formed sequentially. The diffusion preventive layer 38 is composed of a ferromagnetic material containing at least one kind of elements selected from a group of Co, Fe and Ni but not containing Mn. The free magnetization layer 39 has a composition selected from region ABCDEFA in composition diagram of ternary system sequentially connecting point A(44, 23, 33), point B(48, 25, 27), point C(60, 20, 20), point D(65, 15, 20), point E(65, 10, 25) and point F(60, 10, 30) when the coordinate of each composition is represented as (Co content, Mn content, Al content). COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007180470(A) 申请公布日期 2007.07.12
申请号 JP20060062944 申请日期 2006.03.08
申请人 FUJITSU LTD 发明人 JOGO ARATA;OSHIMA KOKEI;IBUSUKI TAKAHIRO;SHIMIZU YUTAKA;UZUMAKI TAKUYA
分类号 H01L43/08;C22C19/07;G01R33/09;G11B5/39;G11C11/15;H01F10/14;H01F10/16;H01F10/32;H01L21/8246;H01L27/105 主分类号 H01L43/08
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