| 摘要 |
PROBLEM TO BE SOLVED: To inhibit metallic contamination which carries out depositing on a wafer and a film formed on it in a apparatus of manufacturing a semiconductor device. SOLUTION: The apparatus 100 of manufacturing the semiconductor device has a chamber 101 for performing processing of the wafer 131, a projection member 109 which projects from the inner wall of the chamber 101 and consists of metal or metallic ceramics, and a cleaning mechanism which cleans inside of the chamber 101 using halogen content gas. The projection member 109 is covered with a substance of inhibition of the reaction of halogen in the halogen content gas and the projection member 109. COPYRIGHT: (C)2007,JPO&INPIT
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