发明名称 STRUCTURE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a structure wherein a semiconductor device of a two-terminal diode or the like can be mounted in the small region of the package of chip scale or the like. SOLUTION: A semiconductor device 10 is made into a mesa structure. An electrode 24a is conductive metal, such as plating material arranged along the mesa side from an n-type Si substrate 11 of the trapezoidal base surface of mesa structure. The electrode serves as a cathode side by being led out to the device surface side. An electrode 24b serving as an anode side is arranged at the same device surface side as the side where the electrode 24a is led out on the basis of p-type diffusion layer 13. This whole composition is sealed by resin 15 so that the surface of the electrodes 24a and 24b may be exposed. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007180223(A) 申请公布日期 2007.07.12
申请号 JP20050376191 申请日期 2005.12.27
申请人 RENESAS TECHNOLOGY CORP 发明人 NATORI MASARU
分类号 H01L29/861;H01L21/329;H01L23/12;H01L29/41 主分类号 H01L29/861
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