| 摘要 |
Disclosed is a method of manufacturing a CMOS image sensor. The method includes the steps of forming a dielectric layer on a semiconductor substrate having a photodiode therein; forming a color filter array having a plurality of color filters on the dielectric layer; forming a plurality of micro-lenses on the color filter array, each micro-lens corresponding to one of the color filters; and performing a plasma surface treatment on the micro-lens.
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