发明名称 |
Light emitting device, method for manufacturing thereof and electronic appliance |
摘要 |
An object of the invention is to provide a method for manufacturing a light emitting device capable of reducing deterioration of elements due to electrostatic charge caused in manufacturing the light emitting device. Another object of the invention is to provide a light emitting device in which defects due to the deterioration of elements caused by the electrostatic charge are reduced. The method for manufacturing the light emitting device includes a step of forming a top-gate type transistor for driving a light emitting element. In the step of forming the top-gate type transistor, when processing a semiconductor layer, a first grid-like semiconductor layer extending in rows and columns is formed over a substrate. The plurality of second island-like semiconductor layers are formed between the first semiconductor layer. The plurality of second island-like second semiconductor layers serve as an active layer of the transistor.
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申请公布号 |
US2007158657(A1) |
申请公布日期 |
2007.07.12 |
申请号 |
US20070709062 |
申请日期 |
2007.02.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MURAKAMI SATOSHI;SAKAKURA MASAYUKI |
分类号 |
H01L29/04;H01L27/32;H01L51/52;H05B33/02;H05B33/08;H05B33/10;H05B33/12 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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