发明名称 |
INCREASING ELECTROMIGRATION LIFETIME AND CURRENT DENSITY IN IC |
摘要 |
An integrated circuit with increased electromigration lifetime and allowable current density and methods of forming same are disclosed. In one embodiment, an integrated circuit includes a conductive line connected to at least one functional via, and at least one dummy via having a first, lower end electrically connected to the conductive line and a second upper end electrically unconnected (isolated) to any conductive line. Each dummy via extends vertically upwardly from the conductive line and removes a portion of a fast diffusion path, i.e., metal to dielectric cap interface, which is replaced with a metal to metallic liner interface. As a result, each dummy via reduces metal diffusion rates and thus increases electromigration lifetimes and allows increased current density. |
申请公布号 |
WO2007045568(A3) |
申请公布日期 |
2007.07.12 |
申请号 |
WO2006EP67144 |
申请日期 |
2006.10.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;GRECO, STEPHEN;HU, CHAO-KUN;MCLAUGHLIN, PAUL |
发明人 |
GRECO, STEPHEN;HU, CHAO-KUN;MCLAUGHLIN, PAUL |
分类号 |
H01L23/522 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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