METHOD FOR FORMING MICROPATTERN IN SEMICONDUCTOR DEVICE

摘要

A method for forming a micro pattern of a semiconductor device is provided to restrain the deformation of the micro pattern of an etch object layer by forming the micro pattern on the etch object layer using an organic ARC(Anti-Reflective Coating) as a hard mask without additional SiON layer. An etch object layer(31) is formed on a substrate(30). An organic ARC is formed on the etch object layer. A photoresist pattern is formed on the organic ARC. An organic ARC pattern is formed on the resultant structure by etching selectively the organic ARC using the photoresist pattern as an etch mask. Then, the etch object layer is partially etched by using the organic ARC as a hard mask.