| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which it is unlikely that the lifetime of optical elements is reduced due to etching and sputtering caused by ionization of the background gas. <P>SOLUTION: An optically activated device configured so as to guide radiation beam or patterned radiation beam M and a support structure 12, configured so as to support optically activated devices M1 to M6 are provided; and further, a gas supplier 14 for supplying a background gas 16 to a system is also provided. The radiation beam or the patterned radiation beam and the background gas react, and a plasma containing a plurality of ions is formed. The support structure comprises an element 20, provided with a material with a small sputter rate, a material with a large sputter threshold energy, or a material with a large ion implantation yield, in order to suppress the sputtering and the generation of sputtering product. <P>COPYRIGHT: (C)2007,JPO&INPIT |
