| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a neutron-irradiated silicon single crystal by which the neutron irradiation quantity essentially required can accurately be comprehended and the target resistivity can correctly be obtained even when a high-resistance silicon single crystal ingot doped with nitrogen is used as a raw material. SOLUTION: In the method for manufacturing the neutron-irradiated silicon single crystal, including at least a process for growing a silicon single crystal ingot having an average resistivity of≥1,000Ωcm while adding nitrogen by a floating zone (FZ) method, a process for irradiating the silicon single crystal ingot with neutron, and a process for heat treating the irradiated silicon single crystal ingot to recover the damage generated by the irradiation with neutron, a donor elimination heat treatment is applied to the silicon single crystal at least before the process for irradiating the silicon single crystal ingot with neutron, and the neutron irradiation quantity is calculated from the resistivity of the silicon single crystal subjected to the donor elimination heat treatment, and thereafter, the neutron irradiation is performed. COPYRIGHT: (C)2007,JPO&INPIT
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