THIN FILM FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME

摘要

A thin film transistor which can prevent FET characteristics from deteriorating even when a channel is short, and a method for manufacturing such thin film transistor are provided. The thin film field effect transistor is provided with a substrate (10); a gate electrode (11); a gate insulating film (12) arranged on the gate electrode; a source electrode (15) and a drain electrode (14) arranged at a prescribed interval on the gate insulating film; and an organic electronic material layer (13), which is arranged on the gate insulating film in electrical contact with the source electrode and the drain electrode. In the organic electronic material layer, at last on a part of an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer, an acid, an acid derivative and/or a reactive product of an acid and the organic electronic material exists.