METHOD OF CRYSTALLIZING SILICON, APPARATUS THEREFORE, THIN FILM TRANSISTOR AND DISPLAY APPARATUS

摘要

A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases. The method is used for forming thin film transistors and for forming a liquid crystal display apparatus comprising this thin film transistor.