OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC COMPONENT COMPRISING ONE SUCH SEMICONDUCTOR CHIP

摘要

The invention relates to an optoelectronic semiconductor chip comprising a semiconductor body (1) having a radiation penetration surface (2) which is at least partially covered by a passivation layer (3). Said passivation layer (3) contains at least one of the following materials: an aluminium nitride or an adamantine nanocomposite material.