发明名称 |
Solid image sensor using junction gate type field-effect transistor as pixel |
摘要 |
Solid-state imager with a plurality of pixels formed in a semiconductor substrate (20). Inside a well region (21) of a first conductive type a source (42) and a drain (41) of the opposite conductive type are formed. Between source (42) and drain (41) a barrier region (43) of the first conductive type is formed. Directly underneath the barrier region is a third semiconductor region (44) of the second conductive type to modulate the field distribution inside the well.
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申请公布号 |
EP1806785(A2) |
申请公布日期 |
2007.07.11 |
申请号 |
EP20070007781 |
申请日期 |
2002.11.12 |
申请人 |
JP |
发明人 |
JP |
分类号 |
H01L27/146;H01L27/148;H01L31/10;H04N5/335;H04N5/353;H04N5/357;H04N5/369;H04N5/374;H04N5/376;H04N5/378 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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