| 摘要 |
A substrate (10) with first metallic contact pads (13a..13d) is disclosed, which first contact pads (13a..13d) and second contact pads (23a..23d) on a second substrate (20) are to be soldered together. According to the invention, the greatest planar extension (Din) of said first contact pads (13a..13d) with respect to said first surface does not exceed 20 µm. Thus, a stand off Xin of zero or almost zero can be achieved when the first substrate (10) and the second substrate (20) are soldered together. This method for instance is applicable to the flip chip technology, wherein preferably "underbump metallization", UBM for short, and "Immersion solder bumping", ISB for short, are used for manufacturing said substrate (10). |
