Processing method for annealing and doping a semiconductor

摘要

A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer ( 13 ) formed on a substrate ( 11 ) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material ( 2 ) including atoms with which the semiconductor layer is to be doped with the laser beam (a'), thereby ablating the atoms of the target material; and doping the melted semiconductor layer with the ablated atoms.