| 摘要 |
A phase change memory device applying a stress current to a memory cell is provided to improve reliability by making a cell easy to fail as a fail cell in advance before a repair operation by applying a stress voltage larger than an internal power supply voltage. A cell array(110) has a plurality of memory cells. A word line decoder selects a main word line in response to an address. A word line driver(125) applies a stress voltage to a sub word line connected to the memory cell, according to the voltage level of the main word line. A stress voltage controller(140) provides the stress voltage to the word line driver in response to a control signal. The memory cell includes a memory element having a phase change material and a selection element for selecting the memory cell, where the selection element is a diode connected between the memory device and the word line.
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