| 摘要 |
Provided is a basic compound including N which shows excellent thermal stability at high temperature, improves focus margin, dry etch resistance and resolution power during a photolithography process and is able to decrease slimming of the line dimension and the film decrease value of the line surface. The basic compound is represented by the formula(1), wherein R is a C1-12 linear, branched, mono-cyclic or poly-cyclic saturated hydrocarbon, or a C1-12 alkoxy, x is 1, 2 or 3, each y and z is independently a length of a carbon chain bound to a nitrogen atom and is an integer from 1 to 4. The method for preparing the basic compound comprises a step of reacting a cyclic compound including a secondary amine represented by the formula(2) with a compound selected from the group consisting of an anhydride compound represented by RC=OOC=OR, an acyl halide compound represented by RC=OX(where X is Cl, Br, and I), and a mixture thereof in the presence of an inorganic halide catalyst. The photoresist composition comprises a photosensitive polymer, a photoacid generator, and the basic compound.
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