发明名称 |
Polymer, resist composition, and patterning process |
摘要 |
A chemically amplified resist composition using an alternating copolymer of alpha-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.
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申请公布号 |
US7241553(B2) |
申请公布日期 |
2007.07.10 |
申请号 |
US20050051721 |
申请日期 |
2005.01.27 |
申请人 |
CENTRAL GLASS CO., LTD. |
发明人 |
HATAKEYAMA JUN;HARADA YUJI;KAWAI YOSHIO;SASAGO MASARU;ENDO MASAYUKI;KISHIMURA SHINJI;MAEDA KAZUHIKO;KOMORIYA HARUHIKO;YAMANAKA KAZUHIRO |
分类号 |
G03F7/004;G03F7/039;C08F18/20;C08F20/22;C08F118/00;C08F120/22;C08F212/14;C08F220/10;C08F224/00;C08F232/08;C08F234/00;G03C1/76;G03F7/038;G03F7/30;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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地址 |
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