A chemical mechanical polishing method is provided to change automatically conditions and to perform a chemical mechanical polishing process to a target value by using simultaneously an in-line metrology method and an end point detection method. A chemical mechanical polishing method is used for planarizing a layer formed on a wafer. The chemical mechanical polishing method layer includes a process for polishing the layer to a target value by using an in-line metrology method(S200) and an end point detection method(S300). The in-line metrology method is used for changing a polishing condition for the layer. The end point detection method is used for polishing the layer to the target value.
