| 发明名称 |
Semiconductor device having trench type capacitors formed completely within an insulating layer |
| 摘要 |
A semiconductor device including a silicon substrate, an insulator film formed on said substrate, a transistor provided on said insulator film and a capacitor formed in a trench formed in said insulator film, and a method of manufacturing the same.
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| 申请公布号 |
US5468979(A) |
申请公布日期 |
1995.11.21 |
| 申请号 |
US19940294787 |
申请日期 |
1994.08.23 |
| 申请人 |
NIPPON STEEL CORPORATION |
发明人 |
TANI, TOMOFUNE;MURAI, ICHIRO;ANZAI, KENJI |
| 分类号 |
H01L21/8242;H01L21/84;H01L27/108;H01L27/12;H01L29/786;(IPC1-7):H01L29/68;H01L29/78;H01L29/92 |
主分类号 |
H01L21/8242 |
| 代理机构 |
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代理人 |
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