COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR HAVING HIGH PHOTOSENSITIVITY AND METHOD FOR FABRICATING THEREOF

摘要

A CMOS(Complementary Metal Oxide Semiconductor) image sensor having high photosensitivity and a method for fabricating the same are provided to secure a light receiving area by forming a plurality of micro-pillars. A CMOS image sensor includes a light receiving element. A plurality of micro-pillars(209) are formed on an upper end of the light receiving element. Each of the micro-pillars is formed with a silicon crystal. A diameter of the micro-pillar is nano-meters and less. A method for fabricating the CMOS image sensor includes a process for preparing a semiconductor substrate(201) having a light receiving element region and a transistor region, a process for causing particles by generating plasma discharge in the light receiving element region, a process for forming the micro-pillars on the light receiving region, and a process for removing the particles.