| 摘要 |
A fuse circuit of a semiconductor memory device is provided to be controlled after a package process of the semiconductor memory device, by changing a fuse capacitor in the fuse circuit from a capacitor state to a short state by applying a fuse cut enable signal to the fuse circuit. A charging voltage generation part(110) outputs a first control signal and a charging voltage in response to a fuse cut enable signal, and outputs the charging voltage as a high voltage when the fuse cut enable signal is enabled. A fuse capacitor(120) is connected between a first node and a second node, and receives the charging voltage through the first node, and outputs a second control signal to the second node. A fuse signal output part(130) is enabled according to the first control signal, and outputs a fuse signal in response to the second control signal. A discharge part(140) is connected to the second node, and discharges potential of the second node according to the second control signal.
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