METHOD OF MAKING SEMICONDUCTOR DEVICE THAT HAS IMPROVED STRUCTURAL STRENGTH

摘要

A method of making a semiconductor device (Figs. 15A-15F) includes a back-grinding step (Fig. 15B) of grinding a back surface of a semiconductor substrate (1), a dicing step (Fig. 15E) of dicing the semiconductor substrate along predetermined dicing lines so as to make pieces of semiconductor devices after the back-grinding step (Fig. 15B), and a laser exposure step (Fig. 15C) of shining laser light (31) on the back surface of the semiconductor substrate (1) after the back-grinding step (Fig. 15B) so as to remove grinding marks (12) generated by the back-grinding step (Fig. 15B).