| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution which can provide the optimal polishing speed and polishing selectivity for a metal interconnection material/barrier metal material/insulation material, during the polishing of the barrier metal material which is conducted following the bulk polishing of the metal interconnection material in the manufacture of a semiconductor device, and thereby can reduce dishing and which never turns into a gel during long time storage and has a superior dispersion stability of a solid content. <P>SOLUTION: This polishing solution is for polishing the barrier metal material on an interlayer insulation material. It contains silicon oxide particles, at least one kind of carboxylic acid compound selected among a group of tricarboxylic acid compounds and tetracarboxylic acid compounds, and water, and has a pH value ranging between 8.0 and 10.5. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
