发明名称 Voltage Selection Circuit
摘要 A voltage selection circuit is disclosed which comprises: a first through a fourth inverters; a first switch circuit including a first MOSFET of N type and a second MOSFET of N type, respective drains thereof being connected in common; and a second switch circuit including a third MOSFET of N type and a fourth MOSFET of N type, respective drains thereof being connected in common, a common drive voltage being input to the first through fourth inverters, a control signal being input to the first inverter and the third inverter, the output of the first inverter being input to the second inverter and the gate of the fourth MOSFET, the output of the second inverter being input to the gate of the first MOSFET, the output of the third inverter being input to the fourth inverter and the gate of the third MOSFET, the output of the fourth inverter being input to the gate of the second MOSFET, a first input voltage selected depending on the control signal being input to the source of the second MOSFET, a second input voltage selected depending on the control signal being input to the source of the fourth MOSFET, the values of the drive voltage, the first input voltage, and the second input voltage being set for the first MOSFET or the third MOSFET such that each gate-source voltage thereof becomes higher than a gate-source threshold voltage at the time of turning on.
申请公布号 US2007152731(A1) 申请公布日期 2007.07.05
申请号 US20060614800 申请日期 2006.12.21
申请人 SANYO SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 IMAI TOSHIYUKI;KIMURA JUNKO
分类号 H03K17/00 主分类号 H03K17/00
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