| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for reducing the used amount of a C<SB>5</SB>F<SB>8</SB>gas in an etching treatment using the C<SB>5</SB>F<SB>8</SB>gas as an etching gas. SOLUTION: In a dry etching device for dry-etching a silicon-oxide film using a C<SB>5</SB>F<SB>8</SB>gas as an etching gas, a stabilization step immediately before a STEP 3 of performing actual etching operation is divided into two steps, that is, a STEP 1 of not introducing the C<SB>5</SB>F<SB>8</SB>gas and a STEP 2 of introducing the C<SB>5</SB>F<SB>8</SB>gas. The flow amount of the C<SB>5</SB>F<SB>8</SB>gas in the STEP 2 is set to be equal to the flow amount of the C<SB>5</SB>F<SB>8</SB>gas in the STEP 3. COPYRIGHT: (C)2007,JPO&INPIT
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