发明名称 |
SPUTTERING TARGET STRUCTURE |
摘要 |
<p>Disclosed is a low-cost sputtering target structure which is excellent in machinability and thermal conductivity, while having good wettability to brazing filler materials. The sputtering target structure can be repeatedly used for a long time and is free from problems such as cracks or separation of the sputtering target. Specifically disclosed is a sputtering target structure obtained by joining a sputtering target with a backing plate, wherein the backing plate is made of a material having a linear expansion coefficient different from that of the sputtering target material by 2 × 10<SUP>-6</SUP> /K or less, and a copper plate having a thickness of 0.3-1.5 mm is arranged on at least one surface of the backing plate.</p> |
申请公布号 |
WO2007074872(A1) |
申请公布日期 |
2007.07.05 |
申请号 |
WO2006JP326070 |
申请日期 |
2006.12.27 |
申请人 |
ADVANCED MATERIAL TECHNOLOGY CO. LTD.;KUNIYA, TSUTOMU;SUZUKI, NOBUYUKI;TERASHI, AKIRA |
发明人 |
KUNIYA, TSUTOMU;SUZUKI, NOBUYUKI;TERASHI, AKIRA |
分类号 |
C23C14/34;C22C49/06;C22C101/04;C22C101/10;C22C101/14;C22C101/18;C22C101/22 |
主分类号 |
C23C14/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|