发明名称 SPUTTERING TARGET STRUCTURE
摘要 <p>Disclosed is a low-cost sputtering target structure which is excellent in machinability and thermal conductivity, while having good wettability to brazing filler materials. The sputtering target structure can be repeatedly used for a long time and is free from problems such as cracks or separation of the sputtering target. Specifically disclosed is a sputtering target structure obtained by joining a sputtering target with a backing plate, wherein the backing plate is made of a material having a linear expansion coefficient different from that of the sputtering target material by 2 × 10&lt;SUP&gt;-6&lt;/SUP&gt; /K or less, and a copper plate having a thickness of 0.3-1.5 mm is arranged on at least one surface of the backing plate.</p>
申请公布号 WO2007074872(A1) 申请公布日期 2007.07.05
申请号 WO2006JP326070 申请日期 2006.12.27
申请人 ADVANCED MATERIAL TECHNOLOGY CO. LTD.;KUNIYA, TSUTOMU;SUZUKI, NOBUYUKI;TERASHI, AKIRA 发明人 KUNIYA, TSUTOMU;SUZUKI, NOBUYUKI;TERASHI, AKIRA
分类号 C23C14/34;C22C49/06;C22C101/04;C22C101/10;C22C101/14;C22C101/18;C22C101/22 主分类号 C23C14/34
代理机构 代理人
主权项
地址