发明名称 Semiconductor manufacturing apparatus and pattern formation method
摘要 A semiconductor manufacturing apparatus includes a liquid supplying section for supplying a liquid onto a stage for holding a wafer on which a resist film is formed; an exposing section for irradiating the resist film with exposing light through a mask with the liquid provided on the resist film; and a removing part for removing, from the liquid, a gas included in the liquid. Thus, the liquid from which the gas has been removed is provided on the resist film, and therefore, foams included in the liquid or formed during the exposure can be removed. Accordingly, exposure abnormality such as diffraction abnormality can be prevented, resulting in forming a resist pattern in a good shape.
申请公布号 US2007153245(A1) 申请公布日期 2007.07.05
申请号 US20070715852 申请日期 2007.03.09
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ENDO MASAYUKI;SASAGO MASARU
分类号 G03B27/52;G02B3/00;G02B9/00;G02B21/02;G03B27/42;G03C5/00;G03F7/00;G03F7/20;G03F7/26 主分类号 G03B27/52
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