发明名称 |
HIGH MOBILITY POWER METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS |
摘要 |
High mobility P-channel power metal oxide semiconductor field effect transistors. In accordance with an embodiment of the present invention, a power MOSFET is fabricated such that the holes flow in an inversion/accumulation channel, which is along the (110) crystalline plane, or equivalents, and the current flow is in the [110] direction, or equivalents, when a negative potential is applied to the gate with respect to the source. The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total "on" resistance of the device. |
申请公布号 |
WO2007076063(A2) |
申请公布日期 |
2007.07.05 |
申请号 |
WO2006US49133 |
申请日期 |
2006.12.22 |
申请人 |
VISHAY-SILICONIX;PATTANAYAK, DEVA;CHEN, KUO-IN;CHAU, THE-TU |
发明人 |
PATTANAYAK, DEVA;CHEN, KUO-IN;CHAU, THE-TU |
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