| 摘要 |
<p>Provided is a composition for a hard mask of a photolithographic process, which forms an inorganic hard mask layer having an excellent etching selectivity on an organic hard mask layer so as to facilitate etching of a micropattern. The composition for an inorganic hard mask(116) comprises poly(borodiphenylsiloxane), polyvinylphenol, a crosslinking agent, a thermal acid generating agent and an organic solvent. Particularly, the crosslinking agent is a melamine-based crossliking agent, and the organic solvent is selected from the group consisting of cyclohexanone, cyclopentanone, gamma-butyrolactone and a combination thereof. The thermal acid generating agent is selected from the group consisting of 2-hdyroxyhexyl p-toluenesulfonate, 2,4,4,6-tetrabromocyclohexadienone, 2-nitrobenzyl p-toluenesulfonate, benzoin p-toluenesulfonate and a combination thereof.</p> |
