发明名称 SOLID-STATE IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging device whose trailing characteristic in an emitter follower circuit is superior to conventional one. SOLUTION: The solid-state imaging device is provided with an emitter follower circuit 2. A transistor Tr2 constituting the emitter follower circuit 2 is a PNP type bipolar transistor. In this constitution, the PNP type transistor Tr2 acts as a current source for positively discharging charge of an output terminal 10 to the ground, when the potential of the output terminal 10 of the emitter follower circuit 2 is lowered. Consequently, the trailing characteristics in the emitter follower circuit 2 of the solid-state imaging device is superior to the conventional devices. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007174707(A) 申请公布日期 2007.07.05
申请号 JP20070070457 申请日期 2007.03.19
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KONO AKIHIRO;KATO YOSHIAKI
分类号 H04N5/335;H04N5/357;H04N5/372 主分类号 H04N5/335
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