发明名称 Heterostructure field effect transistor and associated method
摘要 A device including a first layer having a first material, and the first material having a hexagonal crystal lattice structure defining a first bandgap and one or more non-polar planes is provided. The device further includes a second layer that is adjacent to the first layer having a second material. The second material may have a second bandgap that is different than the first bandgap. The second layer may have a first surface and a second surface, and a portion of the second layer first surface may be coupled to a surface of the first layer to form a two dimensional charge gas and to define a first region. Further, the device includes a conductive layer that is interposed between the first region and a second region that is spaced from the first region, where the device is normally-off if no electrical potential is applied to the conductive layer, and an electrical potential applied to the conductive layer allows electrical communication from the first region to the second region.
申请公布号 US2007152238(A1) 申请公布日期 2007.07.05
申请号 US20050283459 申请日期 2005.11.18
申请人 GENERAL ELECTRIC COMPANY 发明人 MATOCHA KEVIN S.;TILAK VINAYAK
分类号 H01L31/00 主分类号 H01L31/00
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