发明名称 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
摘要 A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
申请公布号 US2007152233(A1) 申请公布日期 2007.07.05
申请号 US20060509063 申请日期 2006.08.24
申请人 KATO HIROYUKI;SANO MICHIHIRO;MAEDA KATSUMI;YONEYAMA HIROSHI;YAO TAKAFUMI;CHO MEOUNG W 发明人 KATO HIROYUKI;SANO MICHIHIRO;MAEDA KATSUMI;YONEYAMA HIROSHI;YAO TAKAFUMI;CHO MEOUNG W.
分类号 C23C14/08;C30B29/16;H01L21/00;H01L21/363;H01L29/24 主分类号 C23C14/08
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