| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, the positive resist composition being capable of satisfying all of exposure latitude (EL), scum reduction and profile on a higher level, and a pattern forming method using the positive resist composition. <P>SOLUTION: The positive resist composition comprises (A) a resin containing a repeating unit (A1) having a lactone structure and a cyano group, and having solubility in an alkali developer increased by the action of an acid, (B) a compound capable of generating a fluorine substituted 2 or 3C alkanesulfonic acid upon irradiation with an actinic ray or radiation, and (C) a solvent. The pattern forming method using the positive resist composition is also provided. <P>COPYRIGHT: (C)2007,JPO&INPIT |
