发明名称 APPARATUS FOR REACTIVE SPUTTERING
摘要 A reactive sputtering system includes a vacuum chamber and a reactive ion source that is positioned inside the vacuum chamber. The reactive ion source generates a reactive ion beam from a reactant gas. A sputtering chamber is positioned in the vacuum chamber. The sputtering chamber includes a sputter source having a sputtering target that generates sputtering flux, walls that contain an inert gas, and a seal that impedes the reactant gas from entering into the sputtering chamber and that impedes inert gas and sputtered material from escaping into the vacuum chamber. A transport mechanism transports a substrate under the reactive ion source and through the sputtering chamber. The substrate is exposed to the reactive ion beam while passing under the reactive ion source and then is exposed to sputtering flux while passing through the sputtering chamber.
申请公布号 US2007151842(A1) 申请公布日期 2007.07.05
申请号 US20060610665 申请日期 2006.12.14
申请人 FLUENS CORPORATION 发明人 DEVITO RICHARD;KLEIN MARTIN;SFERLAZZO PIERO
分类号 C23C14/00;C23C14/32 主分类号 C23C14/00
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