| 摘要 |
A method for fabricating a polycrystalline silicon thin film is provided to minimize metal pollution of the thin film by annealing an amorphous silicon thin film under an atmosphere containing compound of nickel and halogen. An oxide layer is formed on an amorphous silicon thin film on a substrate, and then the amorphous thin film with the oxide layer is subjected to an annealing process under an atmosphere containing a compound of nickel and halogen to form a polycrystalline silicon thin film. The oxide layer formed on the amorphous silicon thin film is any one of a chemical oxide layer, a thermal oxide layer, a plasma oxide layer, a chemical vapor deposition oxide layer, and an atomic layer deposition oxide layer.
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