| 摘要 |
A TFT substrate is provided to minimize a step caused by formation of a gate line, a data line, a TFT, a storage line and a storage electrode by including a buffer layer made of an insulation or non-insulation material with an excellent light transmission characteristic. A TFT(40) is connected to a gate line(50) and a data line(130). A storage line(70) runs in parallel with the gate line. A storage electrode(80) is connected to the storage line. A buffer layer is formed in a region except the gate line, the data line, the TFT, the storage line and the storage electrode. The buffer layer can be made of at least one of SiNx, SiOx, ITO(indium tin oxide) and IZO(indium zinc oxide). A pixel electrode(260) is connected to the TFT. An organic insulation layer is formed to insulate the data line and the pixel electrode.
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