SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEROF

摘要

A semiconductor device is provided to prevent a diffusion phenomenon of metal atoms of a plug by forming a silicon nitride layer between the plug and a substrate. A gate(16) is formed on a semiconductor substrate(10). A low density doping region(18) is formed in the substrate at the right and left sides of the gate. A spacer(22) is formed on the lateral surface of the gate. A source/drain region(24) is formed in the substrate positioned at the right and left sides of the spacer. A nitride layer is formed in the source region and the drain region. An interlayer dielectric including a via is formed on the substrate. A plug(32) is connected to the source region, the drain region and the gate through the via. A nitride layer can be formed on the gate. Silicide(26) can be formed on the nitride layer.