| 摘要 |
A nonvolatile semiconductor memory device is provided to reduce chip size by selecting one of vertically stacked unit block cell arrays by a vertical address decoder and then enabling the unit block cell array to share a single sense amplifier part. A unit block cell array has a plurality of cell arrays stacked vertically, and the cell arrays include a plurality of unit cells arranged in rows and columns. A column address decoder(250) enables a bit line of a selected cell array among the cell arrays by decoding a column address. A sense amplifier part(600) senses and amplifies data on the bit lines of the cell arrays, and is shared by the unit block cell array. A vertical address decoding unit(230) selects one of the cell arrays by decoding a vertical address, and connects the output of the sense amplifier part to the bit line of the selected cell array.
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