METHODS FOR FORMING DAMASECENCE WIRING STRUCTURES HAVING LINE AND PLUG CONDUCTORS FORMED FROM DIFFERENT MATERIALS

摘要

A method for forming a damascene interconnection structure having a line and a plug conductor that are made of different materials is provided to sufficiently fill a damascene recess structure without voids by filling a via hole and a trench with different conductive materials to form a dual damascene interconnection. A dielectric layer is formed on a semiconductor substrate(41), including a plurality of interlayer dielectrics(43,44). The dielectric layer is etched to form a dual damascene recess structure including a via hole and a trench. A first conductive material layer(53) including tungsten is conformally formed to be filled in the via hole. The first conductive material is etched to be removed from the trench and the upper region of the via hole under the trench. A second conductive material layer(54) including copper is formed to fill the trench and the upper region of the via hole.