HIGH SPEED DOUBLE POLYCIDE BIPOLAR/CMOS INTEGRATED CIRCUIT PROCESS,申请号GB19880019657-传众专利搜索

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发明名称	HIGH SPEED DOUBLE POLYCIDE BIPOLAR/CMOS INTEGRATED CIRCUIT PROCESS
摘要
申请公布号	GB8819657(D0)	申请公布日期	1988.09.21
申请号	GB19880019657	申请日期	1988.08.18
申请人	TEKTRONIX INC	发明人
分类号	H01L29/73;H01L21/225;H01L21/285;H01L21/331;H01L21/336;H01L21/8249;H01L27/06;H01L29/45;H01L29/732;H01L29/78;(IPC1-7):H01L21/82	主分类号	H01L29/73
代理机构		代理人
主权项
地址

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