| 摘要 |
A semiconductor device and its fabricating method are provided to reduce a floating body effect in an SOI(Silicon On Insulator) device in which a MOS transistor is formed on a semiconductor layer. A conductive layer(550) and an insulation layer(600) are formed on a semiconductor substrate(100), and then the insulation layer is patterned to form a first opening(610) which penetrates the insulation layer to expose the conductive film pattern. A semiconductor pattern(750) is formed on the insulation layer to be electrically connected to the conductive layer through the first opening, and then transistors(200,900) are formed on the semiconductor pattern. Prior to formation of the conductive layer, a lower interlayer dielectric is formed on the semiconductor substrate.
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